Extremely high-gain source-gated transistors
نویسندگان
چکیده
منابع مشابه
Modeling of high-current source-gated transistors in amorphous silicon
Compared with the field-effect transistor, the source-gated transistor has a much lower saturation voltage and higher output impedance. These features are investigated using computer modeling for amorphous silicon transistors operated at high currents when source barriers are low. In particular, it is shown that low saturation voltages are maintained at high current and are insensitive to sourc...
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The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the...
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ژورنال
عنوان ژورنال: Proceedings of the National Academy of Sciences
سال: 2019
ISSN: 0027-8424,1091-6490
DOI: 10.1073/pnas.1820756116